Quote:Earlier this year Cadence and Micron performed the industry’s first public demonstration of next-generation DDR5 memory. At a TSMC event earlier this month the two companies provided some updates concerning development of the new memory technology. As it appears, the spec has not been finalized at JEDEC yet, but Micron still expects to start production of DDR5 memory chips in late 2019.

As noted back in May, the primary feature of DDR5 SDRAM is capacity of chips, not just a higher performance and a lower power consumption. DDR5 is expected to bring in I/O speeds of 4266 to 6400 MT/s, with a supply voltage drop to 1.1 V and an allowable fluctuation range of 3% (i.e., at ±0.033V). It is also expected to use two independent 32/40-bit channels per module (without/or with ECC). Furthermore, DDR5 will have an improved command bus efficiency (because the channels will have their own 7-bit Address (Add)/Command (Cmd) buses), better refresh schemes, and an increased bank group for additional performance. In fact, Cadence goes as far as saying that improved functionality of DDR5 will enable a 36% higher real-world bandwidth when compared to DDR4 even at 3200 MT/s (this claim will have to be put to a test) and once 4800 MT/s speed kicks in, the actual bandwidth will be 87% higher when compared to DDR4-3200. In the meantime, one of the most important features of DDR5 will be monolithic chip density beyond 16 Gb.

Full reading: https://www.anandtech.com/show/13490/cadence-and-micron-ddr5-update