SK hynix HBM3E (HBM3 Extended) 5th Generation High-Bandwidth-Memory to enter mass pro

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SK hynix HBM3E memory up to 8 Gbps

SK hynix has announced that its 1bnm as now been validated for the first data center products. This node will be used for the production of DDR5 and HBM3E memory, the latter is an even faster version of High-Bandwidth-Memory.



The company confirmed that Xeon Scalable platform how now been certified by Intel to support DDR5 products based on 5th gen 10nm process node. The successful evaluation of the 1bnm DDR5 memory happens just as 1anm (4th Gen 10nm node) has reached readiness and completed Intel’s validation as well. According to the announcement, the first DDR5 memory offers 6.4 Gbps transfer speed, and it is a 33% improvement over products in the ‘early days’ of DDR5 development.



More importantly, the 1bnm DDR5 memory will consume 20% less power than 1anm node. This is because the HKMB fabrication process introduces a high dielectric constant material that prevents leakage current and improves capacitance, notes the company.

What also important is the confirmation that 1bnm modules will also be used by HBM3E (HBM3 Extended). SK hynix only confirm that this type of high bandwidth memory allows 8 Gbps data processing speed and those should enter mass production in 2024. This is a 25% increase over HBM3 and 8 times more than first-gen HBM memory.
 

“Amid growing expectations that the memory market will start to recover from the second half, we believe our industry-leading DRAM technology, proven again through mass production of the 1bnm process this time, will help us improve earnings from the second half,” said Jonghwan Kim, Head of DRAM Development at SK hynix, adding that the 1bnm process will be adopted for a wider range of products such as LPDDR5T and HBM3E in the first half of 2024.
— SK hynix

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